IndiumV3, Chine, Analysis, bibRecord, 000C23

Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer

Identifieur interne : 000C23 ( Chine/Analysis ); précédent : 000C22; suivant : 000C24

Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer

Auteurs : RBID : Pascal:10-0373141

Descripteurs français

Pascal (Inist)
- Cathodoluminescence, Couche épaisse, Propriété optique, Couche mince, Semiconducteur III-V, Composé III-V, Croissance latérale, Relaxation contrainte, Propriété mécanique, Déplacement raie, Déplacement vers le rouge, Fluctuation, Formation image, Diffraction RX, Nitrure de gallium, Nitrure d'indium, Méthode MOCVD, InGaN, GaN, 7860H, 7866, 8105E, 6855A.

English descriptors

KwdEn :
- Cathodoluminescence, Fluctuations, Gallium nitride, III-V compound, III-V semiconductors, Imaging, Indium nitride, Lateral growth, MOCVD, Mechanical properties, Optical properties, Red shift, Spectral line shift, Stress relaxation, Thick films, Thin films, XRD.

Abstract

We have investigated the optical properties of thick InGaN film grown on GaN by cathodeluminescence (CL) spectroscopy. It is found that there is obvious In composition variation in both growth and lateral direction of InGaN film. The depth distribution of In composition is closely related to the strain relaxation process of InGaN film. Accompanied with the relaxation of compressive strain, the In composition of InGaN layer increases and the CL peak energy shifts towards red. Moreover, a rather apparent In composition fluctuation is found in the relaxed upper part of InGaN layer as confirmed by CL imaging.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 004112
to stream Main, to step Repository: 004622
to stream Chine, to step Extraction: 000C23

Links to Exploration step

Pascal:10-0373141

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer</title>
<author><name sortKey="Wang, H" uniqKey="Wang H">H. Wang</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, PO Box 912</s1>
<s2>Beijing 100083</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Jiang, D S" uniqKey="Jiang D">D. S. Jiang</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, PO Box 912</s1>
<s2>Beijing 100083</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Jahn, U" uniqKey="Jahn U">U. Jahn</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7</s1>
<s2>10117 Berlin</s2>
<s3>DEU</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Zhu, J J" uniqKey="Zhu J">J. J. Zhu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, PO Box 912</s1>
<s2>Beijing 100083</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Zhao, D G" uniqKey="Zhao D">D. G. Zhao</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, PO Box 912</s1>
<s2>Beijing 100083</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Liu, Z S" uniqKey="Liu Z">Z. S. Liu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, PO Box 912</s1>
<s2>Beijing 100083</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Zhang, S M" uniqKey="Zhang S">S. M. Zhang</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, PO Box 912</s1>
<s2>Beijing 100083</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Yang, H" uniqKey="Yang H">H. Yang</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences</s1>
<s2>Suzhou 215123</s2>
<s3>CHN</s3>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Suzhou 215123</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">10-0373141</idno>
<date when="2010">2010</date>
<idno type="stanalyst">PASCAL 10-0373141 INIST</idno>
<idno type="RBID">Pascal:10-0373141</idno>
<idno type="wicri:Area/Main/Corpus">004112</idno>
<idno type="wicri:Area/Main/Repository">004622</idno>
<idno type="wicri:Area/Chine/Extraction">000C23</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cathodoluminescence</term>
<term>Fluctuations</term>
<term>Gallium nitride</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Imaging</term>
<term>Indium nitride</term>
<term>Lateral growth</term>
<term>MOCVD</term>
<term>Mechanical properties</term>
<term>Optical properties</term>
<term>Red shift</term>
<term>Spectral line shift</term>
<term>Stress relaxation</term>
<term>Thick films</term>
<term>Thin films</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Cathodoluminescence</term>
<term>Couche épaisse</term>
<term>Propriété optique</term>
<term>Couche mince</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Croissance latérale</term>
<term>Relaxation contrainte</term>
<term>Propriété mécanique</term>
<term>Déplacement raie</term>
<term>Déplacement vers le rouge</term>
<term>Fluctuation</term>
<term>Formation image</term>
<term>Diffraction RX</term>
<term>Nitrure de gallium</term>
<term>Nitrure d'indium</term>
<term>Méthode MOCVD</term>
<term>InGaN</term>
<term>GaN</term>
<term>7860H</term>
<term>7866</term>
<term>8105E</term>
<term>6855A</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We have investigated the optical properties of thick InGaN film grown on GaN by cathodeluminescence (CL) spectroscopy. It is found that there is obvious In composition variation in both growth and lateral direction of InGaN film. The depth distribution of In composition is closely related to the strain relaxation process of InGaN film. Accompanied with the relaxation of compressive strain, the In composition of InGaN layer increases and the CL peak energy shifts towards red. Moreover, a rather apparent In composition fluctuation is found in the relaxed upper part of InGaN layer as confirmed by CL imaging.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0>
</fA01>
<fA02 i1="01"><s0>THSFAP</s0>
</fA02>
<fA03 i2="1"><s0>Thin solid films</s0>
</fA03>
<fA05><s2>518</s2>
</fA05>
<fA06><s2>17</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>WANG (H.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>JIANG (D. S.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>JAHN (U.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>ZHU (J. J.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>ZHAO (D. G.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>LIU (Z. S.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>ZHANG (S. M.)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>YANG (H.)</s1>
</fA11>
<fA14 i1="01"><s1>State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, PO Box 912</s1>
<s2>Beijing 100083</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7</s1>
<s2>10117 Berlin</s2>
<s3>DEU</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences</s1>
<s2>Suzhou 215123</s2>
<s3>CHN</s3>
<sZ>8 aut.</sZ>
</fA14>
<fA20><s1>5028-5031</s1>
</fA20>
<fA21><s1>2010</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13597</s2>
<s5>354000193141120480</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2010 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>11 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>10-0373141</s0>
</fA47>
<fA60><s1>P</s1>
<s3>CR</s3>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Thin solid films</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We have investigated the optical properties of thick InGaN film grown on GaN by cathodeluminescence (CL) spectroscopy. It is found that there is obvious In composition variation in both growth and lateral direction of InGaN film. The depth distribution of In composition is closely related to the strain relaxation process of InGaN film. Accompanied with the relaxation of compressive strain, the In composition of InGaN layer increases and the CL peak energy shifts towards red. Moreover, a rather apparent In composition fluctuation is found in the relaxed upper part of InGaN layer as confirmed by CL imaging.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70H60H</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70H66</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A05H</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B80A15A</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Cathodoluminescence</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Cathodoluminescence</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Couche épaisse</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Thick films</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Propriété optique</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Optical properties</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Thin films</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Croissance latérale</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Lateral growth</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Crecimiento lateral</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Relaxation contrainte</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Stress relaxation</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Propriété mécanique</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Mechanical properties</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Déplacement raie</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Spectral line shift</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Déplacement vers le rouge</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Red shift</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Fluctuation</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Fluctuations</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Formation image</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Imaging</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Diffraction RX</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>XRD</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Nitrure de gallium</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Gallium nitride</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Galio nitruro</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Nitrure d'indium</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Indium nitride</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Indio nitruro</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Méthode MOCVD</s0>
<s5>29</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>MOCVD</s0>
<s5>29</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>InGaN</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>GaN</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>7860H</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>7866</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>8105E</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>6855A</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>242</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000C23 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd -nk 000C23 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    RBID
   |clé=     Pascal:10-0373141
   |texte=   Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer

Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri